The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2002

Filed:

Dec. 06, 1999
Applicant:
Inventors:

Soichi Inoue, Yokohama, JP;

Suigen Kyoh, Yokohama, JP;

Iwao Higashikawa, Tokyo, JP;

Ichiro Mori, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 ; G06F 1/750 ;
U.S. Cl.
CPC ...
G03F 9/00 ; G06F 1/750 ;
Abstract

A method of manufacturing a semiconductor device, light is applied through the cell patterns made in master masks, thereby transferring the cell patterns to, and forming the cell patterns on, a wafer. On the basis of layout data representing a layout diagram of the semiconductor device, the pattern data of the device is divided along the boundaries of the function blocks of the device, generating pattern data items. Master masks are prepared in accordance with the pattern data items. Light is applied to the wafer, first through the master mask and then through the master mask. The cell patterns made in the master masks are transferred to the wafer.


Find Patent Forward Citations

Loading…