The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2002
Filed:
Oct. 04, 2000
Masaki Kitazaki, Narita, JP;
Keiichi Tanaka, Narita, JP;
Applied Materials Inc., Santa Clara, CA (US);
Abstract
A method of forming a blanket tungsten film by CVD process. Before forming a nucleus for a blanket W film, a mixture gas of WF gas, SiH ,gas and H gas is supplied into a vacuum chamber . Here, preprocessing is carried out for about several seconds while the respective flows of gases are regulated such that SiH gas is in excess with respect to WF gas. Preferably, the WF gas/SiH gas flow ratio is held within the range of 0.15 to 0.35, whereas the processing time is set to 2 to 10 seconds. After this preprocessing, nucleation is carried out, so as to form a blanket W film, whereby the film stress will not increase even if the W film is formed in a lower-temperature environment.