The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2002
Filed:
Aug. 24, 2000
Applicant:
Inventors:
Michael Kwan, Redwood City, CA (US);
Eric Liu, Menlo Park, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1311 ; H01L 2/1469 ; C23C 8/00 ;
U.S. Cl.
CPC ...
H01L 2/1311 ; H01L 2/1469 ; C23C 8/00 ;
Abstract
A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching conditions, the gap may be substantially 100% filled. Such filling is achieved by adjusting the flow rates of the precursor gases such that the deposition to sputtering ratio during the deposition phases is within certain predetermined limits.
Published as:
US6335288B1; EP1182273A2; KR20020016591A; US2002040764A1; JP2002141349A; EP1182273A3; TWI243214B; US7052552B2; KR100817356B1; EP1182273B1; DE60136891D1; JP4790170B2;