The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2001
Filed:
Dec. 14, 1999
Hotaka Ishizuka, Kofu, JP;
Mitsuhiro Tachibana, Yamanashi-ken, JP;
Tokyo Electron Limited, Tokyo-To, JP;
Abstract
A method of forming a tungsten film is capable of forming a tungsten film having a low resistivity. The method of forming a tungsten film (,) on a surface of a workpiece by a vacuum processing system (,) comprises, in sequential steps: a seed crystal growing process for growing tungsten seed crystal grains (,) on the surface of the workpiece in an atmosphere of a film forming gas containing tungsten atoms; a boron-exposure process for exposing the workpiece to an atmosphere of a boron-containing gas for a short time; and a tungsten film forming process for forming a tungsten film by making the tungsten seed crystal grains grow in an atmosphere of a gas containing a film forming gas containing tungsten atoms, and a hydrogen-diluted boron-containing gas. The tungsten film has a low resistivity.