The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2001
Filed:
Jul. 09, 1998
Applicant:
Inventors:
Raymond Hung, San Jose, CA (US);
Joseph Patrick Caulfield, Cupertino, CA (US);
Jian Ding, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ; H01L 2/13065 ;
U.S. Cl.
CPC ...
H01L 2/1302 ; H01L 2/13065 ;
Abstract
An integrated self aligned contact process includes oxide etch with high oxide etch rate, integrated selective oxide etch and nitride liner removal with high selectivity to corner nitride with the ability to remove the bottom nitride liner, and stripping of all polymer and photoresist. C,F,and CH,F,are used for the high selectivity oxide etch step. The unique behavior of CH,F,in high density plasma allows polymer protection to form on the nitride corner/sidewall while at the same time etching the bottom nitride.