The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2001
Filed:
Sep. 27, 2000
Applicant:
Inventors:
Shao-Wen Hsia, Mission Viejo, CA (US);
Michael J. Berg, Mechanicsville, VA (US);
Maureen R. Brongo, Laguna Hills, CA (US);
Assignee:
Conexant Systems, Inc., Newport Beach, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05H 1/00 ; H01L 2/1302 ;
U.S. Cl.
CPC ...
H05H 1/00 ; H01L 2/1302 ;
Abstract
Method and apparatus for plasma etching both metal and inorganic dielectric layers in a single chamber during deep sub-micron semiconductor fabrication. Fluorine based chemistries, or a mixture of fluorine and chlorine based chemistries, are used to etch the inorganic dielectric layer. A switch is then made to chlorine based chemistries, within the same etching chamber, which are utilized to etch the metal layer. Overetching may also be performed with chlorine based chemistries to clear any residuals.