The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2001
Filed:
Feb. 16, 2000
Applicant:
Inventors:
Olivier Joubert, Meylan, FR;
David Fuard, Villemandeur, FR;
Assignee:
France Telecom, Paris, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
A process for the anisotropic etching of a dielectric organic polymer material using a plasma is provided. The gas phase of the plasma may include a gas mixture of O,/NH,, O,/H,O, O,/CH,or O,/H,. The oxygen concentration of the gas mixture may be less than 40% by volume. The process may include the fabrication of metal interconnects in a damascene-type structure of an integrated circuit.