The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2001
Filed:
Apr. 20, 1999
Satoshi Kamiyama, Hyogo, JP;
Masahiro Kume, Shiga, JP;
Ryoko Miyanaga, Nara, JP;
Isao Kidoguchi, Hyogo, JP;
Yuzaburo Ban, Osaka, JP;
Ayumu Tsujimura, Osaka, JP;
Yoshiaki Hasegawa, Osaka, JP;
Akihiko Ishibashi, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A GaN buffer layer and an Si-doped n-type GaN contact layer are formed in this order on a sapphire substrate. An n-type Al,Ga,N cladding layer, an n-type Al,Ga,N optical guide layer, a multi-quantum well active layer, in which Al,Ga,N well layers and Al,Ga,N barrier layers are alternately stacked, an Mg-doped p-type Al,Ga,N optical guide layer, a p-type Al,Ga,N,P,cladding layer and a p-type GaN contact layer are stacked in this order on an active region on the upper surface of the n-type contact layer.