The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2001

Filed:

Jan. 27, 1999
Applicant:
Inventors:

Karen Maex, Herent, BE;

Mikhail Rodionovich Baklanov, Leuven, BE;

Serge Vanhaelemeersch, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/348 ; H01L 2/352 ; H01L 2/940 ;
U.S. Cl.
CPC ...
H01L 2/348 ; H01L 2/352 ; H01L 2/940 ;
Abstract

The present invention is related to a metallization structure on a fluorine-containing dielectric and a method for fabrication thereof. This metallization structure comprises a conductive pattern; a fluorine-containing dielectric; and a barrier layer containing a material, i.e. a near noble metal such as Co, Ni, Pt and Pd, said barrier layer comprising at least a first part, being positioned between said fluorine-containing dielectric and said conductive pattern, said first part containing at least a first and a second sub-layer, said first sub-layer contacting said fluorine-containing dielectric and being impermeable for fluorine. Particularly by depositing a layer of said material on a fluorine-containing dielectric, a stable and thin layer of a fluoride of said material is formed in a self-limiting way.


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