The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2001
Filed:
May. 19, 1999
Applicant:
Inventors:
Assignee:
United Microelectronics Corp., Hsin-Chu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A method for forming MOSFET is disclosed. The method includes firstly providing a substrate, on which a gate without spacer is already formed. A first spacer is formed on sidewall of the gate, a lightly doped drain is subsequently formed in the substrate. Next, a second spacer is formed on the first spacer. Finally, a heavily doped drain is formed in the substrate. The present invention can enhance stability of resistance of the gate and reduce pollution of the machine. Therefore, quality and efficiency of the fabrication of MOSFET will be enhanced.