The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2001
Filed:
Jan. 11, 1999
Applicant:
Inventors:
Assignee:
VLSI Technology, Inc., San Jose, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A method for forming a semiconductor structure on an active area mesa with minimal loss of field oxide deposited in isolation trenches adjacent the mesa. The trench insulating material is protected by an etch barrier layer having at least a partial resistance to etchants used in further device processing steps. The barrier layer may also be deposited over the surface of the substrate to protect it from damage during device processing. The barrier layer may be removed by an etchant having a selectivity for the barrier layer over that of the surrounding device elements. Final processing of the device may be completed once the barrier layer is removed.