The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2001
Filed:
Apr. 27, 2000
Ming-I Chen, Tainan Hsien, TW;
Jui-Hsiang Pan, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A CMOS structure having a silicon dioxide outer ring around the sense region. The CMOS sense structure has a substrate, a n,region, a n,region, an isolation region, a field implant region and a silicon dioxide outer ring region. The n,region is formed in the substrate, and the n,region is formed within the n,region. The isolation region is formed in the substrate next to the edge of the n,region. The field implant region is formed under the isolation region. The silicon dioxide outer ring region is formed over the n,region, a portion of the isolation region and a portion of the n,region. The silicon dioxide outer ring can prevent surface leakage that is caused by etching and lengthening the distance from the n,region to the field implant region so that edge junction leakage is reduced.