The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2001
Filed:
Apr. 13, 2000
Mamoru Nakasuji, Yokohama, JP;
Teruaki Okino, Kamakura, JP;
Nikon Corporation, Tokyo, JP;
Abstract
Charged-particle-beam pattern-transfer methods and apparatus are disclosed. Circuit patterns on a mask are divided into a plurality of fields, each field including respective connection ends. Fields that are to be adjacent as transferred to a substrate include a common portion of the circuit pattern in their respective connection ends. The common portions are projected onto the substrate to substantially overlap. The connection ends are illuminated by an image of a shaping aperture image that is illuminated with a charged-particle beam. The shaping-aperture image can be scanned across the fields so that wafer areas corresponding to the connection ends are exposed during exposure of the connecting adjacent fields and so that the dose received by the wafer is substantially uniform. The shaping-aperture image can be vibrated in a direction perpendicular to a scanning direction to illuminate connection ends. The vibration provides uniform dose on the wafer in areas corresponding to the connection ends. With such methods, circuit patterns are connected, even if the patterns from the fields are slightly offset.