The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2001
Filed:
Jul. 27, 2000
Robert Falster, London, GB;
Marco Cornara, Galliate, IT;
Daniela Gambaro, Galliate, IT;
Massimiliano Olmo, Novara, IT;
MEMC Electronic Materials, SPA, Novara, IT;
Abstract
A process for preparing an silicon epitaxial wafer. The wafer has a front surface having an epitaxial layer deposited thereon, a back surface, and a bulk region between the front and back surfaces, wherein the bulk region contains a concentration of oxygen precipitates. In the process, a wafer having interstitial oxygen atoms is first subjected to an oxygen precipitation heat treatment to cause the nucleation and growth of oxygen precipitates to a size sufficient to stabilize the oxygen precipitates. An epitaxial layer is then deposited on the surface of the oxygen precipitate stabilized wafer.