The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2001
Filed:
Jun. 21, 1999
Wen-Cheng Chien, Kaoshiung Country, TW;
Hui-Chen Chu, Kao-Hsuing County, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A plasma etch method for forming a patterned layer first employs a substrate having formed therover a blanket microelectronic layer. There is also formed over the blanket microelectronic layer a patterned mask layer. There is then etched, while employing a first plasma etch method which employs the patterned mask layer as an etch mask layer, the blanket microelectronic layer to form a partially etched blanket microelectronic layer. There is then etched, while employing a second plasma etch method which employs the patterned mask layer as an etch mask layer, the partially etched blanket microelectronic layer to form a patterned microelectronic layer. Within the present invention, the first plasma etch method employs a higher bias voltage than the second plasma etch method.