The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2001
Filed:
Jan. 12, 2000
Applicant:
Inventor:
Wei-Shiau Chen, Chin-Men Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ;
Abstract
A method of fabricating a dummy pattern is proposed. A semiconductor substrate is divided into a dense region and a sparse region. Conducting patterns are formed on the dense region. A dielectric layer is formed over the substrate and the conducting patterns. Photoresist patterns are formed on the dielectric layer above the sparse region. The dielectric layer is etched back to form a plurality of spacers on the sidewall of the conducting patterns, and simultaneously, a plurality of dummy patterns are formed on the sparse region.