The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2001
Filed:
Jul. 28, 2000
Yi-Min Jen, Pan-Chiao, TW;
Tse-Yi Lu, Hsin-Chu, TW;
Ya-Ling Hung, Hsin-Chu, TW;
Li-Wu Tsao, Taipei, TW;
Abstract
A method for manufacturing trench isolation, comprising firstly, defining a trench isolation over the substrate by photolithography and etching technique. Beside, by way of a spacer fabricating process to form a spacer around each of the two sides of the trench isolation. Therefore, a sharp corner in the crossing region between the trench isolation and an active area adjacent thereto in the substrate is smoothed, and the process window for a sequential gate polysilicon etching is improved, as well as the opportunity to leave polysilicon residue in the corner is eliminated. The short circuit between polysilicon gates is also avoided.