The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2001
Filed:
Jul. 18, 2000
Applicant:
Inventors:
Seetharaman Sridhar, Irving, TX (US);
Amitava Chatterjee, Plano, TX (US);
Hisashi Shichijo, Plano, TX (US);
Alec J. Morton, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ;
U.S. Cl.
CPC ...
H01L 2/18238 ;
Abstract
A method for forming integrated circuit bipolar junction transistors for mixed signal circuits. The implants used to form the well regions of the CMOS circuits,form the collector regions of bipolar junction transistors. The CMOS transistor pocket implants form the base region of the bipolar junction transistor, and the CMOS drain extension implants form the emitter region of the bipolar junction transistor.