The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2001
Filed:
Mar. 29, 1999
Applicant:
Inventors:
Assignee:
Mosel Vitelic Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23F 1/00 ;
U.S. Cl.
CPC ...
C23F 1/00 ;
Abstract
A method for polysilicon etching with HBr, He and He/O,as reactive gas source is disclosed. A chamber pressure greater than 30 mTorr is held to achieve high selectivity to polysilicon over silicon oxide. A total flow rate of HBr and He greater than 420 sccm is provided. Under this condition of the total flow rate of HBr and He, the flow rates of HBr and He are respectively held in the range of about 180-280 sccm, and the flow rate of He/O,is at about 5-10 sccm.