The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2001

Filed:

May. 31, 1994
Applicant:
Inventors:

Shigeyoshi Watanabe, Kanagawa-ken, JP;

Tsuneaki Fuse, Tokyo, JP;

Koji Sakui, Tokyo, JP;

Masako Ohta, Kanagawa-ken, JP;

Yukihito Oowaki, Kanagawa-ken, JP;

Kenji Numata, Kanagawa-ken, JP;

Fujio Masuoka, Kanagawa-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 ;
U.S. Cl.
CPC ...
G11C 7/02 ;
Abstract

Here is disclosed a dynamic semiconductor memory of high integration density, which has parallel word lines and parallel bit lines formed on a substrate. The bit lines include a pair of bit lines. A memory cell is coupled to a word line and to one bit line of the bit-line pair. The memory cell is composed of MOSFETs of a submicron size. A sense amplifier section is connected to the pair of bit lines, and senses and amplifies the potential difference between the pair of bit lines in a data readout mode. The amplifier section has a BIMOS structure, having MOSFETs and bipolar transistors. It has a driver section comprised of bipolar transistors.


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