The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2001
Filed:
Oct. 12, 1999
Minoru Hanazaki, Tokyo, JP;
Takayuki Ikushima, Tokyo, JP;
Kenji Shirakawa, Tokyo, JP;
Shinji Yamaguchi, Tokyo, JP;
Masakazu Taki, Tokyo, JP;
Other;
Abstract
A plasma processing apparatus mainly comprises a processing chamber (,) formed by a vacuum vessel, a magnetic field forming coil (,) arranged around the processing chamber for forming a rotating magnetic field and gas supply means (,) supplying various gases to the processing chamber (,). The processing chamber (,) is divided into a reaction chamber (,) forming plasma with a partition wall (,) and a buffer chamber (,) discharging externally supplied gases with pressure difference. The reaction chamber (,) includes a high-frequency electrode arranged oppositely to the buffer chamber (,). The gas supply means (,) includes pulse gas valves (,and,) for pulsatively supplying gases to the processing chamber (,). Thus provided are a plasma processing method and a plasma processing apparatus capable of uniformly processing a wafer having a large diameter and reducing RIE lag with respect to a fine etching pattern.