The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2001
Filed:
Sep. 03, 1999
Applicant:
Inventors:
Hisao Asakura, Ome, JP;
Yoshitaka Tadaki, Hannou, JP;
Toshihiro Sekiguchi, Hidaka, JP;
Ryo Nagai, Mizuho-machi, JP;
Masafumi Miyamoto, Tachikawa, JP;
Masayuki Nakamura, Ome, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
A mask for etching a relatively thin gate insulating film formed in a gate insulating film forming region is formed by patterning a photoresist film, and the mask is used for introducing an impurity for adjusting the threshold voltages of n-channel field-effect transistors and p-channel field-effect transistors having the relatively thin gate insulating film into regions on the semiconductor substrate not covered with the mask.