The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2001
Filed:
Mar. 06, 1998
Dirk Dewar Brown, Santa Clara, CA (US);
Takeshi Nogami, Sunnyvale, CA (US);
Guarionex Morales, Santa Clara, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
An improved damascene metal interconnect for use in a semiconductor integrated circuit. By using highly directional deposition of barrier and/or seed layers the texture of the damascene structure is improved. A first barrier metal layer is deposited in a standard deposition manner, and a second barrier metal is then applied in a highly directional manner. For example, tungsten, titanium and tantalum nitrides can be used as barrier metals. Copper or aluminum based metal is deposited over the second barrier metal, and is then polished by using a chemical mechanical polish. A passivation layer can then be deposited over the interconnect.