The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2001
Filed:
Oct. 12, 2000
Der-Yuan Wu, Hsinchu, TW;
Chiu-Te Lee, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method is for forming a deep trench capacitor under a shallow trench isolation structure. The method first provides a substrate and sequentially forms a pad oxide, a first mask layer, and a second mask layer over the substrate. A photoresist layer formed on the second mask layer has a thicker portion and a thinner portion, location of the thinner portion is the predetermined location to be formed an STI structure thereunder. A photoresist opening is between the thicker portion and the thinner portion to form a deep trench in the substrate by etching. The photoresist layer is removed, wherein the second mask layer under the thinner portion of the photoresist layer is also removed to expose the first mask layer. A deep trench capacitor is formed on the lower portion of the deep trench. A dielectric collar layer is formed on the sidewall of the deep trench. A selective growth polysilicon layer is formed to fill the deep trench with a height higher than the substrate surface. A self-aligned STI opening is formed to expose a portion of the dielectric collar layer having a contact with the deep trench. Then, a STI structure is formed to fill the STI opening.