The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2001
Filed:
Dec. 20, 1999
United Microelectronics Corporation, Hsinchu, TW;
Abstract
A method of making a semiconductor device including a MOS transistor provides an insulator formed on a semiconductor substrate and a gate electrode formed on the insulator. Source/drain regions are formed within the substrate on either side of the gate electrode. A layer of titanium is sputtered onto the semiconductor device, and a layer of titanium nitride is direct sputtered over the titanium layer using a titanium nitride target. The device is annealed at a first temperature to form a structure including titanium silicide on the polysilicon electrode, titanium silicide on the surface of the source/drain regions, unreacted titanium over the silicide regions, and titanium nitride over the unreacted metal The unreacted titanium and titanium nitride are removed from the structure, and the structure is annealed at a higher temperature than the first temperature to form a lower resistivity titanium silicide.