The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2001
Filed:
Jun. 30, 1999
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method for preventing the cluster defect of HSG is disclosed. Where the cluster defect means that when wafer with HSGs are cleaned just when HSGs are formed, there are a plurality of clusters appear on HSGs. In comparison with conventional fabrication that wafer and HSGs are directly cleaned just when these HSGs are formed. The idea behind the invention is that when HSGs are formed, a heat treatment is applied to change surface states of HSGs before wafer and HSGs are cleaned. Owing to the fact that these surface states of HSGs are improved by the heat treatment, no cluster will be formed during following clean process. Thus, the formation of cluster is obviously protected and then quality of any application of HSGs is improved by the invention.