The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2001

Filed:

Mar. 27, 1998
Applicant:
Inventors:

Jun Zhao, Cupertino, CA (US);

Ashok Sinha, Palo Alto, CA (US);

Avi Tepman, Cupertino, CA (US);

Mei Chang, Saratoga, CA (US);

Lee Luo, Fremont, CA (US);

Alex Schreiber, Santa Clara, CA (US);

Talex Sajoto, Campbell, CA (US);

Stefan Wolff, Sunnyvale, CA (US);

Charles Dornfest, Fremont, CA (US);

Michal Danek, Cupertino, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/634 ;
U.S. Cl.
CPC ...
C23C 1/634 ;
Abstract

A method of depositing titanium nitride by chemical vapor deposition in a chamber having several design features directed to the conductive nature of titanium nitride, particularly when a plasma treatment step is performed after the thermal deposition of the film. Preferably, during the post-deposition plasma treatment, RF power is applied only to the showerhead counter-electrode and none to the pedestal supporting the wafer, thereby preventing charging of the wafer.


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