The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2001
Filed:
May. 11, 1999
Kla-Tencor Corporation, San Jose, CA (US);
Abstract
The surface of a doped semiconductor wafer is heated locally by means of a pump beam whose intensity is modulated at a first frequency. The heated area is sampled by a probe beam whose intensity is modulated at a second frequency. After the probe beam has been modulated (reflected or transmitted) at the first frequency by the wafer, the modulated probe beam is detected at a frequency equal to the difference between the harmonics of the first and second frequencies to determine dose of the dopants in the wafer. Such or similar type of instrument for measuring dose may be combined with an ellipsometer, reflectometer or polarimeter for measuring dose as well as thickness(es) and/or indices of refraction in a combined instrument for measuring the same sample.