The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2001
Filed:
Aug. 24, 1999
Katsuhide Manabe, Aichi-ken, JP;
Hisaki Kato, Aichi-ken, JP;
Michinari Sassa, Aichi-ken, JP;
Shiro Yamazaki, Aichi-ken, JP;
Makoto Asai, Aichi-ken, JP;
Naoki Shibata, Aichi-ken, JP;
Masayoshi Koike, Nakashima-gun, JP;
Toyoda Gosei Co., Ltd., Aichi-ken, JP;
Abstract
A light-emitting semiconductor device (,) consecutively includes a sapphire substrate (,), an AlN buffer layer (,), a silicon (Si) doped GaN n,-layer (,) of high carrier (n-type) concentration, a Si-doped (Al,Ga,),In,N n,-layer (,) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al,Ga,),In,N emission layer (,), and a Mg-doped (Al,Ga,),In,N p-layer (,). The AlN layer (,) has a 500 Å thickness. The GaN n,-layer (,) has about a 2.0 &mgr;m thickness and a 2×10,/cm,electron concentration. The n,-layer (,) has about a 2.0 &mgr;m thickness and a 2×10,/cm,electron concentration. The emission layer (,) has about a 0.5 &mgr;m thickness. The p-layer,has about a 1.0 &mgr;m thickness and a 2×10,/cm,hole concentration. Nickel electrodes (,) are connected to the p-layer (,) and n,-layer (,), respectively. A groove (,) electrically insulates the electrodes (,). The composition ratio of Al, Ga, and In in each of the layers (,) is selected to meet the lattice constant of GaN in the n,-layer (,). The LED (,) is designed to improve luminous intensity and to obtain purer blue color.