The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2001
Filed:
Sep. 03, 1999
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ; H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ; H01L 2/1336 ;
Abstract
A new method is provided for the creation of metal plugs. After the gate electrode structures have been created on the surface of a semiconductor substrate, the Inter Level Dielectric (ILD) is deposited over the poly gates. The layer of ILD is polished, a second layer of dielectric is deposited over the layer of ILD. A stop layer is deposited over the second layer of dielectric, a Rapid Thermal Annealing (RTA) is performed to the stop layer and the thin layer of dielectric. The metal plugs are then patterned and deposited after which the process proceeds for the further creation of the interconnect metal.