The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2001
Filed:
Sep. 01, 2000
Der-Yuan Wu, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating a salicide gate is provided, wherein a logic region and a memory cell region are formed on a substrate. A plurality of polysilicon gates and adjoining source/drain regions are also formed in both regions. A protection layer is formed to cover the polysilicon gates and the source/drain regions, followed by forming a photoresist layer on the substrate. A blanket defocus exposure is then conducted, whereby a part of the protection layer on the top surface of the polysilicon gates in both regions is eventually removed. Another photoresist layer is formed in the memory cell region, while the protection layer in the logic region is removed. A self-aligned silicide process is then conducted to form the salicide gates in both regions, and to selectively forming salicide layers on the source/drain regions in the logic region only.