The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2001
Filed:
Apr. 19, 1999
Applicant:
Inventors:
Ming-Chun Chou, Taipei, TW;
Huai-Jen Shu, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 3/126 ;
U.S. Cl.
CPC ...
G01R 3/126 ;
Abstract
A cathode-anode apparatus is constructed whereby the wafer under test, connected to a conducting wire, forms the cathode terminal and a copper plate, also connected to a conducting wire, forms the anode terminal. The wafer under test and the copper plate are immersed in a CuSO,—H,O solution. A positive dc voltage is applied to the copper plate; the dc current ionizes the CuSO,solution and forms Cu,ions. These Cu,ions will diffuse to the wafer surface. Most of the Cu,ions will accumulate in and around defective contacts or vias in the semiconductor surface making these defective contacts or vias readily identifiable.