The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2001
Filed:
Jun. 17, 1998
Applicant:
Inventors:
Kevin M. Connolly, Chandler, AZ (US);
Jung S. Kang, Chandler, AZ (US);
Berni W. Landau, Beaverton, OR (US);
James E. Breisch, Chandler, AZ (US);
Akira Kakizawa, Phoenix, AZ (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7146 ; H01L 3/100 ;
U.S. Cl.
CPC ...
H01L 2/7146 ; H01L 3/100 ;
Abstract
Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.