The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2001
Filed:
Apr. 07, 1998
Robert Dawson, Austin, TX (US);
Mark I. Gardner, Cedar Creek, TX (US);
Frederick N. Hause, Austin, TX (US);
H. Jim Fulford, Jr., Austin, TX (US);
Mark W. Michael, Cedar Park, TX (US);
Bradley T. Moore, Austin, TX (US);
Derick J. Wristers, Austin, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A semiconductor integrated circuit having a multiple split gate is forming using a first polysilicon layer and a second polysilicon layer to form alternating first and second gate electrodes within an active area. The alternating gate electrodes are electrically isolated from one another by means of a gate insulating layer that is formed adjacent the side-walls of each firs gate electrode. Source and drain regions are formed adjacent the ends of the multiple split gate to define a channel region.