The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2001
Filed:
Aug. 21, 2000
Siliconeware Precision Industries Co., Ltd., Taichung, TW;
Abstract
A method is proposed for forming circuit probing (CP) contact points on fine pitch peripheral bond pads (PBP) on a flip chip for the purpose of facilitating peripheral circuit probing of the internal circuitry of the flip chip. The proposed method is characterized in the forming of a dual-layer NiV/Cu metallization structure, rather than a triple-layer Al/NiV/Cu metallization structure, over each aluminum-based PBP, which includes a bottom layer of nickel-vanadium (NiV) deposited over the aluminum-based PBP and an upper layer of copper (Cu) deposited over the nickel-vanadium layer. When low-resolution photolithographic and etching equipment is used for photoresist mask definition for selective removal of the NiV/Cu metallization structure, the resulted photoresist masking can be misaligned to the PBP. However, since no aluminum layer is included in the metallization structure, a Cu/NiV specific etchant would only etch away the copper layer and the nickel-vanadium layer but not the aluminum-based PBP, thus leaving the unmasked portion of the aluminum-based PBP intact.