The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Oct. 19, 1998
Fouriers Tseng, Hsin-Chu, TW;
Mei Fun Chen, Hsin-Chu, TW;
At Chuan Chen, Hsin-Chu, TW;
Huey Ling Chen, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
An improved method for sectioning a semiconductor wafer using a focused ion beam (FIB) apparatus permits a clearer image of the site of the cut to be formed from secondary electrons produced by the beam. The clearer image helps the operator of the FIB apparatus to make a more accurate cut. Before the FIB cut is made, a laser is used to cut into the wafer to expose the lowermost layer of silicon dioxide. This oxide and any oxide splatters from the laser cut are then removed with an oxide etcher. The FIB cut can then be made without splattering silicon dioxide over the area being viewed. A low beam current is used for the FIB cut.