The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Jun. 01, 2000
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
This invention provides a method of forming a self-aligned silicide of a semiconductor wafer, the surface of the semiconductor wafer comprising at least one silicon device. A cobalt-containing metallic layer is formed on the semiconductor wafer which covers on the surface of the silicon device. A first thermal treatment process is performed to rapidly heat the semiconductor wafer up to 300˜500° C. for 10˜50 seconds and form Co,Si on the surface of the silicon device. A second thermal treatment process is performed to rapidly heat the semiconductor wafer up to 400˜680° C. for 20˜50 seconds and then cool down the semiconductor wafer afterwards so as to convert Co,Si into CoSi. An etching process is performed to remove the metallic layer. A third thermal treatment process is performed to rapidly heat the semiconductor wafer up to 700˜950° C. for 30˜60 seconds and then cool down the semiconductor wafer afterward so as to convert CoSi into the self-aligned silicide.