The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Nov. 04, 1999
Tong-Hsin Lee, Taipei Hsien, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for increasing gate surface area for depositing silicide material. A silicon substrate having device isolation structures therein is provided. A stack of sacrificial layers comprising a first sacrificial layer at the bottom, a second sacrificial layer in the middle and a third sacrificial layer on top is formed over the silicon substrate. A gate opening that exposes a portion of the substrate is formed in the stack of sacrificial layers. A portion of the second sacrificial layer exposed by the gate opening is next removed to form a side opening on each side of the gate opening. The gate opening together with the horizontal side opening form a cross-shaped hollow space. A gate oxide layer is formed at the bottom of the gate opening. Polysilicon material is deposited to fill the gate opening and the side openings, thereby forming a cross-shaped gate polysilicon layer. The third, the second and the first sacrificial layers are removed. A metal silicide layer is formed over the gate polysilicon layer.