The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Oct. 22, 1999
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 ; G03C 5/00 ;
U.S. Cl.
CPC ...
G03F 9/00 ; G03C 5/00 ;
Abstract
A simple, cost-effective method for forming a lithography mask with a directly imaged portion and an attenuated, phase shifted portion. In particular, the use of such a method for forming an outrigger-type phase shift mask. The mask is formed on a blank consisting of a transparent quartz substrate over which is an attenuating phase shift layer and an optically opaque layer, by a process that produces a pattern in an E-beam sensitive resist with two different E-beam energy depositions. The higher energy deposition is used to form the main pattern, while the lower energy deposition forms the pattern for the outrigger.