The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2001
Filed:
Nov. 03, 1998
Applicant:
Inventors:
Gang-soo Chu, Suwon, KR;
Dong-yun Kim, Suwon, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ; H01L 2/13065 ;
U.S. Cl.
CPC ...
H01L 2/1302 ; H01L 2/13065 ;
Abstract
A method for etching a metal film containing aluminum, using a hard mask, and a method for forming a line of a semiconductor device using the same, are provided. A metal film containing Al is formed on a semiconductor substrate. A hard mask pattern is formed on the metal film containing Al. Next, the metal film containing Al is etched using an etching gas, including a gas containing carbon, and using the hard mask pattern as the etching mask. Preferably, the hard mask pattern is formed of an oxide film or a nitride film in which case a capping layer for the etched metal layer is not needed.