The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2001
Filed:
Oct. 30, 1998
Applicant:
Inventor:
Shih-Ching Chen, Nantou Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1033 ; C23C 1/630 ;
U.S. Cl.
CPC ...
H01L 2/1033 ; C23C 1/630 ;
Abstract
A method of coating an amorphous silicon layer. An amorphous silicon layer is directly deposited on the polysilicon nodes by a self-aligned method. A chemical mechanical polishing process is performed to control the thickness of the amorphous silicon layer. No additional photoresist is used during the whole processes. Therefore, the duration for deposition can be reduced and the quality of the amorphous silicon film is improved.