The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2001
Filed:
Aug. 30, 1999
Applicant:
Inventors:
Cheng-Yu Chu, Hsin-Chu, TW;
Jenq-Dong Sheu, Chung-Ho, TW;
Dean E. Lin, Hsin-Chu, TW;
Yi-Jing Chu, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18246 ;
U.S. Cl.
CPC ...
H01L 2/18246 ;
Abstract
A metal code process for a read-only memory (ROM) combines the alignment dip back process (to reduce the polyoxide thickness over the gate electrode and to protect the field oxide) with a double charge implant approach to provide the function of a depletion mode ROM cell. The alignment dip back process also avoids leakage current problems. A stable depletion mode device character is achieved by implant step energies greater than 150 keV.