The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2001
Filed:
Sep. 08, 1998
Hitoshi Habuka, Annaka, JP;
Shin-Etsu Handotai, Co., Ltd., Tokyo, JP;
Abstract
A first layer having a same conductivity and a substantially identical concentration as a CZ substrate having a high impurity concentration is formed by a vapor phase growth process on the substrate directly, a pressure is changed to purge an atmosphere, and then a second layer having a same conductivity as the substrate and having a lower concentration by 3 or more orders of magnitude than the substrate is formed by the vapor phase growth process. Thereby there is simply and inexpensively formed a silicon single crystal thin film by the vapor phase growth process which film has no crystal defective layer and has a dopant concentration abruptly changing at an interface between the film and a high concentration layer.