The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2001
Filed:
Jan. 22, 1999
Applicant:
Inventors:
Anand Murthy, Beaverton, OR (US);
Chia-Hong Jan, Portland, OR (US);
Ebrahim Andideh, Portland, OR (US);
Kevin Weldon, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ; H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/18238 ; H01L 2/1336 ;
Abstract
The present invention describes an MOS device having deposited silicon regions and its a method of fabrication. In one embodiment of the present invention a substrate having a thin oxide layer formed on a silicon surface is heated and exposed to an ambient comprising germane (GeH,) to remove the thin oxide from the silicon surface. A silicon or silicon alloy film can then be deposited onto the silicon surface of the substrate.