The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2001
Filed:
Jan. 08, 1999
Applicant:
Inventor:
Yu-Chang Chow, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A method of fabricating a barrier layer includes a clamped metal layer formed on a substrate. After the formation of the clamped metal layer, a rapid thermal process is performed. A clampless metal nitride layer is then formed on the clamped metal layer.
Quick Actions:
Chow, Yu-Chang. (2001). Method of fabricating barrier layer in integrated circuit (U.S. Patent No. 6232226). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6232226
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