The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2001
Filed:
Jul. 10, 1998
Applicant:
Inventors:
Yoshiko Yoshida, Tokyo, JP;
Hideki Naruoka, Tokyo, JP;
Yasuhiro Kimura, Tokyo, JP;
Yasuo Yamaguchi, Tokyo, JP;
Toshiaki Iwamatsu, Tokyo, JP;
Yuuichi Hirano, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
An object is to provide a semiconductor substrate processing method and a semiconductor substrate that prevent formation of particles from the edge part of the substrate. Silicon ions are implanted into the edge part of an SOI substrate (,) in the direction of radiuses of the SOI substrate (,) to bring a buried oxide film (,) in the edge part of the SOI substrate (,) into a silicon-rich state. Thus an SOI substrate (,) is provided, where the buried oxide film (,) has substantially been eliminated in the edge part.