The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2001
Filed:
Jul. 02, 1999
Chih Ming Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A split gate flash memory cell formed in a semiconductor substrate is disclosed. The memory cell comprises: a deep n-well formed in the substrate; a p-well formed in the deep n-well; a select gate structure formed on the p-well, the select gate structure comprising a stack of a gate oxide, a polysilicon layer, and a cap oxide; a tunnel oxide layer formed on the p-well, the tunnel oxide adjacent to the control gate structure; a floating gate formed over the select gate structure and extending over at least a portion of the tunnel oxide layer; a source formed in the p-well, the source formed adjacent to the floating gate; and a drain formed in the p-well, the drain formed adjacent to the select gate structure. The memory cell is programmed by source side channel hot electron and is erased using channel erasing to improve cycling endurance.