The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2001
Filed:
Nov. 06, 1998
Kathleen R. Early, Santa Clara, CA (US);
Suzette K. Pangrle, Cupertino, CA (US);
Maria C. Chan, San Jose, CA (US);
Lewis Shen, Cupertino, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
In the manufacture of sub 0.35 micron semiconductors using deep ultraviolet lithography, a bilayer of silicon dioxide on top of silicon oxynitride is used as bottom anti-reflective coating and an etch hard mask for photolithographic resist. Since the silicon dioxide is optically transparent at the deep ultraviolet wavelengths being used (248 nm), its thickness in combination with a preselected reflective silicon oxynitride thickness satisfies the zero reflectivity goal and, at the same time, is adequately thick to serve as a hard mask for self-aligned etch and self-aligned-source etch.