The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2001

Filed:

Jan. 11, 1999
Applicant:
Inventors:

Mu-Chun Wang, Hsinchu Hsien, TW;

Chau-Neng Wu, Hsinchu, TW;

Shiang Huang-Lu, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 5/22 ;
U.S. Cl.
CPC ...
H03K 5/22 ;
Abstract

A circuit for evaluating the asymmetric antenna effect of a transistor pair is provided, which can be implemented by using bipolar or complementary metal oxide semiconductor (CMOS) transistors to implement a differential amplifier, with which a pair of transistors Q,and Q,having similar characteristics are connected. The transistors Q,and Q,have a structure of, for example, one polysilicon layer and three metal layers, in which a second metal layer M,and a third metal layer M,are used for signal input, and metal layer M,close to the gate oxide layer of both the transistors Q,and Q,are used to obtain a differential antenna ratio. The differential amplifier comprises transistors Q,and Q,serving as an active load, and transistor Q,, which is used for adjusting the voltage gain.


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