The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2001
Filed:
Aug. 10, 1999
Applicant:
Inventor:
Tong-Hsin Lee, Taipei Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ; H01L 2/14763 ; H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/176 ; H01L 2/14763 ; H01L 2/131 ;
Abstract
A method of manufacturing an inter-metal dielectric layer. A substrate having a plurality of wires formed thereon is provided. A portion of the substrate is exposed to form an opening between the wires. The opening is filled with a flowable dielectric material, wherein a surface level of the flowable dielectric material is lower than that of the wires. A plurality of spacers is formed on the sidewall of the wires exposed by the flowable dielectric material. The flowable dielectric material is removed. An anisotropic deposition process with a poor-lateral-filling ability is performed to form a dielectric layer with a void under the spacer over the substrate.